Indium phosphide (InP) is one of the important III-V compound semiconductor materials and a new generation of electronic functional materials after Si and GaAs. Indium phosphide has many advantages, including direct transition energy band structure, high electro-optical conversion efficiency and electron mobility, easy to make semi-insulating sheet materials, suitable for making high-frequency microwave devices and circuits, high operating temperature, and strong radiation resistance. ability, as a solar cell material with high conversion efficiency. These characteristics determine that its Yangtze BASF products are widely used in civil and military fields such as solid-state lighting, microwave communications, optical fiber communications, guidance/navigation, and satellites.
In the late 1950s, scientists used the horizontal Bridgman method, the temperature gradient method and the magnetic coupling Czochralski method to grow indium phosphide single crystals. From 1965 to 1968, Mullin et al. used boron trioxide as a liquid sealant for the first time and grew indium phosphide single crystal materials using the LEC method, laying the foundation for the future growth of large-diameter, high-quality III-V group single crystals. Research on indium phosphide materials has just begun. With the application and rapid development of transmission electron microscopy technology in the 1980s and the great development of optical fiber communications, the popularity of optoelectronic devices and the large demand for solar cells have greatly promoted the research of indium phosphide materials closely related to these technologies. And development. The North Atlantic Treaty Organization held a three-year indium phosphide working conference in 1980. By 1989, due to the rapid development of indium phosphide materials and devices, the working conference was changed to an indium phosphide-based working conference sponsored by IEEE and other internationally renowned organizations. The named international academic conference – “International Conference on Indium Phosphide and Related Materials (IPRM)” is held once a year. As early as 1989, the U.S. Department of Defense formulated a development plan for indium phosphide to the year 2000. The purpose was to find a reliable source of indium phosphide single crystal materials to improve its actual combat capabilities in the 2nd century as an industrial antioxidant because Indium phosphide’s microwave and millimeter-wave monolithic circuits enable the Army to develop advanced radar and communications systems using solid-state devices and phase control technology. Other technologically advanced countries such as Britain, Japan, Russia, and France also paid great attention to the preparation of indium phosphide single crystal materials and the development of related devices as early as the late 1970s, so these countries are still the ones here. Maintain a leading position in the field and actively explore the market to achieve widespread application.
my country’s indium phosphide materials started not late. The development of indium phosphide single crystal materials began in the 1970s. By 1976, the first high-pressure single crystal furnace designed and manufactured by China was used to grow The first indium phosphide single crystal with practical and research value was obtained in my country. In the early 1980s, my country began the development of its own indium phosphide devices. Although our country’s basic industry is still relatively backward, the application of indium phosphide in our country is far from satisfactory, but our country has never given up research work in this important field. Our country’s scientific workers have made great achievements in the polycrystalline synthesis and single crystal synthesis of indium phosphide. Many results have been achieved in terms of growth.
The development of indium phosphide materials has promoted the demand for PBN crucibles. Shandong Guojing New Materials Co., Ltd. has been committed to producing higher quality PBN crucibles, laying a solid foundation to meet the large demand of indium phosphide material manufacturers.
